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vishay siliconix SIZ300DT document number: 67715 s11-1646-rev. b, 15-aug-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual n-channel 30 v (d-s) mosfets features ? halogen-free according to iec 61249-2-21 definition ? powerpair optimizes high-side and low-side mosfets for synchronous buck converters ? trenchfet ? power mosfets ? 100 % rg and uis tested ? compliant to rohs directive 2002/95/ec applications ? computing system power ? pol ? synchronous buck converter notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. see solder profile ( www.vishay.com/ppg?73257 ). the powerpair is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation pr ocess in manufacturing. a solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. product summary v ds (v) r ds(on) ( ? ) i d (a) a q g (typ.) channel-1 30 0.0240 at v gs = 10 v 11 3.5 nc 0.0320 at v gs = 4.5 v 11 channel-2 30 0.0110 at v gs = 10 v 28 21.2 nc 0.0165 at v gs = 4.5 v 28 powerpair ? 3 x 3 ordering information: SIZ300DT-t1-ge3 (lead (pb)-free and halogen-free) s1/d2 d1 3 mm pin 1 3 mm g1 d1 d1 d1 1 2 3 4 8 7 6 5 g2 s2 s2 s2 d 1 s 2 n-channel 2 osfet n-channel 1 osfet g 1 s 1 /d 2 g 2 absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol channel-1 channel-2 unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 11 a 28 a a t c = 70 c 11 a 28 a t a = 25 c 9.8 b, c 14.9 b, c t a = 70 c 7.8 b, c 11.9 b, c pulsed drain current (t = 300 s) i dm 30 40 continuous source drain diode current t a = 25 c is 11 a 26 t a = 25 c 3.2 b, c 3.8 b, c avalanche current l = 0.1 mh i as 12 15 single pulse avalanche energy e as 711mj maximum power dissipation t c = 25 c p d 16.7 31 w t c = 70 c 10.7 20 t a = 25 c 3.7 b, c 4.2 b, c t a = 70 c 2.4 b, c 2.7 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com 2 document number: 67715 s11-1646-rev. b, 15-aug-11 vishay siliconix SIZ300DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. surface mounted on 1" x 1" fr4 board. b. maximum under steady state conditions is 69 c/w for channel-1 and 64 c/w for channel-2. notes: a. guaranteed by design, not s ubject to production testing. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. thermal resistance ratings parameter symbol channel-1 channel-2 unit typ. max. typ. max. maximum junction-to-ambient a, b t ? 10 s r thja 27 34 24 30 c/w maximum junction-to-case (drain) steady state r thjc 67.53.24 specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0, i d = 250 a ch-1 30 v v gs = 0 v, i d = 250 a ch-2 30 v ds temperature coefficient ? v ds /t j i d = 250 a ch-1 24 mv/c i d = 250 a ch-2 30 v gs(th) temperature coefficient ? v gs(th) /t j i d = 250 a ch-1 - 4.1 i d = 250 a ch-2 - 5 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a ch-1 1 2.4 v v ds = v gs , i d = 250 a ch-2 1 2.2 gate source leakage i gss v ds = 0 v, v gs = 20 v ch-1 100 na ch-2 100 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v ch-1 1 a v ds = 30 v, v gs = 0 v ch-2 1 v ds = 30 v, v gs = 0 v, t j = 55 c ch-1 5 v ds = 30 v, v gs = 0 v, t j = 55 c ch-2 5 on-state drain current b i d(on) v ds ?? 5 v, v gs = 10 v ch-1 10 a v ds ?? 5 v, v gs = 10 v ch-2 10 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 9.8 a ch-1 0.0200 0.0240 ? v gs = 10 v, i d = 15 a ch-2 0.0090 0.0110 v gs = 4.5 v, i d = 8.5 a ch-1 0.0265 0.0320 v gs = 4.5 v, i d = 12 a ch-2 0.0135 0.0165 forward transconductance b g fs v ds = 15 v, i d = 9.8 a ch-1 30 s v ds = 15 v, i d = 15 a ch-2 30 dynamic a input capacitance c iss channel-1 v ds = 15 v, v gs = 0 v, f = 1 mhz channel-2 v ds = 15 v, v gs = 0 v, f = 1 mhz ch-1 400 pf ch-2 730 output capacitance c oss ch-1 125 ch-2 155 reverse transfer capacitance c rss ch-1 25 ch-2 65 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 9.8 a ch-1 7.4 12 nc v ds = 15 v, v gs = 10 v, i d = 15 a ch-2 14.2 22 channel-1 v ds = 15 v, v gs = 4.5 v, i d = 9.8 a channel-2 v ds = 15 v, v gs = 4.5 v, i d = 15 a ch-1 3.5 5.3 ch-2 6.8 11 gate-source charge q gs ch-1 1.5 ch-2 2.2 gate-drain charge q gd ch-1 1.1 ch-2 2.3 gate resistance r g f = 1 mhz ch-1 0.5 2.6 5.2 ? ch-2 0.5 2.6 5.2 www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 67715 s11-1646-rev. b, 15-aug-11 www.vishay.com 3 vishay siliconix SIZ300DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit dynamic a tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 15 v, r l = 1.9 ? i d ? 8 a, v gen = 4.5 v, r g = 1 ? channel-2 v dd = 15 v, r l = 1.5 ? i d ? 10 a, v gen = 4.5 v, r g = 1 ? ch-1 25 50 ns ch-2 25 50 rise time t r ch-1 45 90 ch-2 80 160 turn-off delay time t d(off) ch-1 10 20 ch-2 20 40 fall time t f ch-1 10 20 ch-2 40 80 tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 15 v, r l = 1.9 ? i d ? 8 a, v gen = 10 v, r g = 1 ? channel-2 v dd = 15 v, r l = 1.5 ? i d ? 10 a, v gen = 10 v, r g = 1 ? ch-1 5 10 ch-2 5 10 rise time t r ch-1 10 20 ch-2 20 40 turn-off delay time t d(off) ch-1 10 20 ch-2 15 30 fall time t f ch-1 7 15 ch-2 10 20 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c ch-1 11 a ch-2 26 pulse diode forward current a i sm ch-1 30 ch-2 40 body diode voltage v sd i s = 8 a, v gs = 0 v ch-1 0.84 1.2 v i s = 10 a, v gs = 0 v ch-2 0.82 1.2 body diode reverse recovery time t rr channel-1 i f = 8 a, di/dt = 100 a/s, t j = 25 c channel-2 i f = 10 a, di/dt = 100 a/s, t j = 25 c ch-1 17 35 ns ch-2 20 40 body diode reverse recovery charge q rr ch-1 9 20 nc ch-2 14 30 reverse recovery fall time t a ch-1 9.5 ns ch-2 12.5 reverse recovery rise time t b ch-1 7.5 ch-2 7.5 www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com 4 document number: 67715 s11-1646-rev. b, 15-aug-11 vishay siliconix SIZ300DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 10 v thru 4 v v gs = 3 v 0 0.01 0.02 0.03 0.04 0.05 0 5 10 15 20 25 30 r ds(on) - on-resistance () i d -drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 2 4 6 8 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 24 v v ds = 7.5 v v ds = 15 v i d = 11 a transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 100 200 300 400 500 600 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss 0.6 0.8 1.0 1.2 1.4 1.6 -50-250 255075100125150 r ds(on) -on-resistance (normalized) t j - junction temperature ( c) v gs = 4.5 v i d = 9.8 a v gs = 10 v www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 67715 s11-1646-rev. b, 15-aug-11 www.vishay.com 5 vishay siliconix SIZ300DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c 1.4 1.6 1.8 2.0 2.2 2.4 -50-250 255075100125150 v gs(th) (v) t j -temperature ( c) i d = 250 a on-resistance vs. gate-to-source voltage single pulse power 0 0.01 0.02 0.03 0.04 0.05 0.06 0246810 r ds(on) - on-resistance () v gs - gate-to-source voltage (v) t j = 125 c t j = 25 c i d = 9.8 a 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 power (w) time (s) safe operating area, junction-to-ambient 0.01 0.1 1 10 100 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specied 10 s 100 s 100 ms limited by r ds(on) * 1 ms t single pulse a = 25 c bvdss limited 10 ms 1 s dc www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com 6 document number: 67715 s11-1646-rev. b, 15-aug-11 vishay siliconix SIZ300DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. current derating* 0 5 10 15 20 25 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c) package limited power junction-to-case 0 4 8 12 16 20 25 50 75 100 125 150 power (w) t c - case temperature ( c) www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 67715 s11-1646-rev. b, 15-aug-11 www.vishay.com 7 vishay siliconix SIZ300DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =69 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted normalized thermal transient impedance, junction-to-case 0.1 1 0.0001 0.001 0.01 0.1 1 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com 8 document number: 67715 s11-1646-rev. b, 15-aug-11 vishay siliconix SIZ300DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 10 v thru 4 v v gs = 3 v 0 0.005 0.010 0.015 0.020 0.025 0 10 20 30 40 r ds(on) - on-resistance () i d -drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 3 6 9 12 15 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 24 v v ds = 7.5 v v ds = 15 v i d = 11 a transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 0 1 2 3 4 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 200 400 600 800 1000 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50-250 255075100125150 r ds(on) -on-resistance (normalized) t j - junction temperature ( c) v gs = 4.5 v i d = 15 a v gs = 10 v www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 67715 s11-1646-rev. b, 15-aug-11 www.vishay.com 9 vishay siliconix SIZ300DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 v gs(th) (v) t j -temperature ( c) i d = 250 a on-resistance vs. gate-to-source voltage single pulse power 0 0.01 0.02 0.03 0.04 0.05 0246810 r ds(on) - on-resistance () v gs - gate-to-source voltage (v) t j = 125 c t j = 25 c i d = 15 a 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 power (w) time (s) safe operating area, junction-to-ambient 0.01 0.1 1 10 100 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specied 10 s 100 s 100 ms limited by r ds(on) * 1 ms t single pulse a = 25 c bvdss limited 10 ms 1 s dc www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com 10 document number: 67715 s11-1646-rev. b, 15-aug-11 vishay siliconix SIZ300DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. current derating* 0 10 20 30 40 50 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c) package limited power, junction-to-case 0 10 20 30 40 25 50 75 100 125 150 power (w) t c - case temperature ( c) www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 67715 s11-1646-rev. b, 15-aug-11 www.vishay.com 11 vishay siliconix SIZ300DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67715 . normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =64 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted normalized thermal transient impedance, junction-to-case 0.1 1 0.0001 0.001 0.01 0.1 1 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 67698 www.vishay.com revison: 14-mar-11 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package information vishay siliconix powerpair 3 x 3 case outline millimeters inches dim. min. nom. max. min. nom. max. a 0.70 0.75 0.80 0.028 0.030 0.031 a1 0.00 0.05 0.000 0.002 b 0.35 0.40 0.45 0.014 0.016 0.018 b1 0.20 0.25 0.38 0.008 0.010 0.015 c 0.18 0.20 0.23 0.007 0.008 0.009 d 3.00 0.118 d1 2.35 2.40 2.45 0.093 0.094 0.096 e 3.00 0.118 e1 0.94 0.99 1.04 0.037 0.039 0.041 e2 0.47 0.52 0.57 0.019 0.020 0.022 e 0.65 bsc 0.026 bsc k 0.25 typ. 0.010 typ. k1 0.35 typ. 0.014 typ. k2 0.30 typ. 0.012 typ. l 0.27 0.32 0.37 0.011 0.013 0.015 ecn: t11-0071-rev. a, 14-mar-11 dwg: 5998 d e 0.10 c 2x 0.10 c 2x a l k2 k2 k e1 d1 k1 e2 b e a1 0.10 0.15 b 1 c a 0.10 c 0.0 8 c pin 1 dent 1 2 8 7 6 5 1234 8 765 c 3 4 www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 63294 www.vishay.com revision: 25-may-11 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 pad pattern vishay siliconix recommended minimum pad for powerpair ? 3 x 3 dimen s ion s in millimeter s (inche s ) keep-out 3.5 mm x 3.5 mm for non terminating trace s recommended pad for powerpair 3 x 3 0.450 (0.018) 0.650 (0.026) 0.450 (0.018) 0.084 (0.003) 0.390 (0.015) 1.611 (0.063) 1.200 (0.047) 2.450 (0.096) 0.209 (0.008) 1.036 (0.041) 0.562 (0.022) 0.306 (0.012) www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners. www.datasheet.co.kr datasheet pdf - http://www..net/

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